jiangsu changjiang electronics technology co., ltd to-92 plastic-encapsulate transistors 3dd13002/ 3dd13002b transistor (npn) feature power dissipation p cm: 900 mw (tamb=25 ) collector current i cm: 3dd13002: 1 a 3dd13002b: 0.8 a collector-base voltage v (br)cbo: 600 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v(br) cbo ic=100 a, i e =0 600 v collector-emitter breakdown voltage v(br) ceo ic= 1ma, i b =0 400 v emitter-base breakdown voltage v(br) ebo i e = 100 a, i c =0 6 v collector cut-off current i cbo v cb = 600v, i e =0 100 a emitter cut-off current i ebo v eb = 6v, i c =0 100 a h fe(1) v ce = 10v, i c = 200 ma 9 40 h fe(2) v ce = 10v, i c = 10 ma 6 collector-emitter saturation voltage v ce (sat) i c =200ma, i b = 40 ma 0.5 v base-emitter saturation voltage v be (sat) i c =200ma, i b =40 ma 1.1 v transition frequency f t v ce =10v, ic=100ma f =1mhz 5 mhz fall time t f 0.5 s storage time t s i c =1a, i b1 =-i b2 =0.2a v cc =100v 2.5 s classification of h fe (1) range 9-15 15-20 20-25 25-30 30-35 35-40 1 2 3 to-92 1. emitter 2. collector 3. base
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